JSMSEMI · FETs & Power MOSFETs · MPN FQD11P06TM-JSM
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 9.86nC@4.5V |
| Output Capacitance(Coss) | 97pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 34.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 105mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.44nF |
| Type | P-Channel |
60V 20A 2.5V 34.7W 105mΩ@4.5V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS