JSMSEMI FDS3672

JSMSEMI · FETs & Power MOSFETs · MPN FDS3672

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Specifications

Gate Charge(Qg)16.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

N-Channel 100V 8A 3.3W Surface Mount SOP-8

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