JSMSEMI FDN338P

JSMSEMI · FETs & Power MOSFETs · MPN FDN338P

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)210mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF

Technical details

20V 1.6A 0.35W Surface Mount SOT-23

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