JSMSEMI · FETs & Power MOSFETs · MPN FDD3670-JSM
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| Gate Charge(Qg) | 16.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 71W |
| RDS(on) | 20mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
100V 36A 2.5V 71W 20mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS