JSMSEMI · FETs & Power MOSFETs · MPN FDD13AN06A0-JSM
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.659nF |
| Type | N-Channel |
60V 60A 3V 68W 12mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS