JSMSEMI · FETs & Power MOSFETs · MPN FDC5614P
No reviews yet — be the first to review JSMSEMI FDC5614P.
| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 96mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF |
P-Channel 60V 3.3A 2W Surface Mount SOT-23-6