JSMSEMI · FETs & Power MOSFETs · MPN FDB33N25TM-JSM
No reviews yet — be the first to review JSMSEMI FDB33N25TM-JSM.
| Gate Charge(Qg) | 154nC@160V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 50mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
N-Channel 250V 35A 250W Surface Mount TO-263-2L