JSMSEMI · FETs & Power MOSFETs · MPN EMB06N03G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 23.5nC@10V |
| Output Capacitance(Coss) | 205pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.32nF |
| Type | N-Channel |
30V 20A 2.5V 3.1W 6.5mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS