JSMSEMI BSN20BKR-JSM

JSMSEMI · FETs & Power MOSFETs · MPN BSN20BKR-JSM

No reviews yet — be the first to review JSMSEMI BSN20BKR-JSM.

Specifications

Output Capacitance(Coss)3pF
Pd - Power Dissipation300mW
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)710pC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)2.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2.2pF
Number1 N-channel
Input Capacitance(Ciss)34pF

Technical details

300mW 60V 1V 2.3Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs