JSMSEMI BFS17NTA

JSMSEMI · Transistors (BJTs) · MPN BFS17NTA

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)7GHz
Collector - Emitter Voltage VCEO10V
Emitter-Base Voltage VEBO3V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor 10V 100mA 7GHz 200mW Surface Mount SOT-23

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