JSMSEMI 3DD13001

JSMSEMI · Transistors (BJTs) · MPN 3DD13001

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO420V
DC Current Gain25
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))1.05V

Technical details

420V 25 1 NPN NPN 150mA SOT-23 Single Bipolar Transistors RoHS

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