JSCJ UMC3N

JSCJ · Transistors (BJTs) · MPN UMC3N

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor13kΩ
typeNPN+PNP
Resistor Ratio1
Number1 NPN Pre-Biased, 1 PNP Pre-Biased (Base-Collector Junction)
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5

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