JSCJ MMBTA13 K2D

JSCJ · Transistors (BJTs) · MPN MMBTA13 K2D

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Specifications

Vbe Saturation(VBE(sat))2V
Current - Collector Cutoff100nA
Vbe On(VBE(on))-
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO10V
DC Current Gain10000
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.5V

Technical details

30V 10000 NPN 300mA SOT-23 Single Bipolar Transistors RoHS

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