JSCJ MMBT589

JSCJ · Transistors (BJTs) · MPN MMBT589

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation310mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23

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