JSCJ MJD41C

JSCJ · Transistors (BJTs) · MPN MJD41C

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)9A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 9A 3MHz 1.25W Surface Mount TO-252-2L

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