JSCJ MJD3055

JSCJ · Transistors (BJTs) · MPN MJD3055

No reviews yet — be the first to review JSCJ MJD3055.

Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))8V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.25W Surface Mount TO-252-2L

Related Transistors (BJTs)