JSCJ KTD2058

JSCJ · Transistors (BJTs) · MPN KTD2058

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain60
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 60V 3A 3MHz 2W Through Hole TO-220F

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