JSCJ KSB1151(RANGE:200-400)

JSCJ · Transistors (BJTs) · MPN KSB1151(RANGE:200-400)

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain400
Pd - Power Dissipation1.25W
Number1 PNP
typePNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 60V 5A 1.25W Through Hole TO-126-3

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