JSCJ KSB1151

JSCJ · Transistors (BJTs) · MPN KSB1151

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain400
Pd - Power Dissipation1.25W
typePNP
Number1 PNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 60V 5A 30MHz 1.25W Through Hole TO-126

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