JSCJ EMH1

JSCJ · Transistors (BJTs) · MPN EMH1

No reviews yet — be the first to review JSCJ EMH1.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor28.6kΩ
Number2 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,0.2V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563

Related Transistors (BJTs)