JSCJ EMD9

JSCJ · Transistors (BJTs) · MPN EMD9

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))100mV
Input Resistor13kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
typeNPN+PNP
Resistor Ratio4.7
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563

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