JSCJ · Transistors (BJTs) · MPN EMB9
No reviews yet — be the first to review JSCJ EMB9.
| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 68 |
| Vce Saturation(VCE(sat)) | - |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 5.7 |
| Pd - Power Dissipation | 150mW |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563