JSCJ DTA114YSA-TA

JSCJ · Transistors (BJTs) · MPN DTA114YSA-TA

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor13kΩ
Resistor Ratio5.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))300mV@0.1mA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Through Hole TO-92S

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