JSCJ DTA114EE

JSCJ · Transistors (BJTs) · MPN DTA114EE

No reviews yet — be the first to review JSCJ DTA114EE.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523-3

Related Transistors (BJTs)