JSCJ CJQ6601

JSCJ · FETs & Power MOSFETs · MPN CJQ6601

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A;4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)75mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.05nF;954pF

Technical details

30V 700mV 1.4W 75mΩ@4.5V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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