JSCJ · FETs & Power MOSFETs · MPN CJP10N65
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| Gate Charge(Qg) | 44nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.43nF |
650V 10A 4V 700mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS