JSCJ CJND2004

JSCJ · FETs & Power MOSFETs · MPN CJND2004

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Specifications

Configuration-
Gate Charge(Qg)17nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)9.5mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.95nF

Technical details

20V 10A 400mV 9.5mΩ@2.5V 1 N-channel DFNWB-6-EP(2x5) Single FETs, MOSFETs RoHS

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