JSCJ · FETs & Power MOSFETs · MPN CJMPD08
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| Gate Charge(Qg) | 7.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 700mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 80mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 480pF |
12V 3.6A 400mV 700mW 80mΩ@2.5V 1 P-Channel DFNWB-6L-A(2x2) Single FETs, MOSFETs RoHS