JSCJ · FETs & Power MOSFETs · MPN CJMN2012
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| Gate Charge(Qg) | 32nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 350mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 30mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
N-Channel 20V 12A DFNWB2x2-6L