JSCJ CJK2009

JSCJ · FETs & Power MOSFETs · MPN CJK2009

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)670pF
Current - Continuous Drain(Id)9A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation450mW
Reverse Transfer Capacitance (Crss@Vds)582pF
RDS(on)16mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.6nF
TypeP-Channel

Technical details

P-Channel 20V 9A 450mW Surface Mount SOT-23-3L

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