JSCJ CJCD2005

JSCJ · FETs & Power MOSFETs · MPN CJCD2005

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Specifications

Configuration-
Gate Charge(Qg)17nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)12.5mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

20V 8A 400mV 12.5mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS

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