JSCJ CJCD2003

JSCJ · FETs & Power MOSFETs · MPN CJCD2003

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Specifications

Configuration-
Gate Charge(Qg)17nC
Drain to Source Voltage18V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV;1V;4.5V;6.2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)8.2mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.95nF

Technical details

18V 10A 8.2mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS

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