JSCJ CJAE55P03

JSCJ · FETs & Power MOSFETs · MPN CJAE55P03

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Specifications

Gate Charge(Qg)34.3nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)273pF
RDS(on)11.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.282nF

Technical details

30V 55A 50W 11.5mΩ@4.5V 1 P-Channel DFNWB-8L(3x3) Single FETs, MOSFETs RoHS

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