JSCJ CJAE2002

JSCJ · FETs & Power MOSFETs · MPN CJAE2002

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Specifications

Gate Charge(Qg)26.5nC@4.5V
Drain to Source Voltage18V
Current - Continuous Drain(Id)15A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)285pF
RDS(on)4.4mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.97nF

Technical details

N-Channel Array 18V 15A 3W Surface Mount TDFN-8-EP(3x3)

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