JSCJ · FETs & Power MOSFETs · MPN CJAC10TH10
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| Gate Charge(Qg) | 43.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.95nF |
100V 100A 1V 100W 10mΩ@4.5V 1 N-channel PQFNWB-8L(5x6) Single FETs, MOSFETs RoHS