JSCJ BC857S

JSCJ · Transistors (BJTs) · MPN BC857S

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain630
Pd - Power Dissipation300mW
Configuration-
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-55℃~+150℃

Technical details

45V 630 PNP 2 PNP 200mA SOT-363 Single Bipolar Transistors RoHS

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