JSCJ AD-MMBT5401

JSCJ · Transistors (BJTs) · MPN AD-MMBT5401

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain80
Pd - Power Dissipation0.3mW
Number1 PNP
typePNP
Current - Collector(Ic)600uA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 150V 0.6mA 100MHz 0.3mW Surface Mount SOT-23

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