JSCJ 3DD13003N3

JSCJ · Transistors (BJTs) · MPN 3DD13003N3

No reviews yet — be the first to review JSCJ 3DD13003N3.

Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain10
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 1.25W Through Hole TO-126

Related Transistors (BJTs)