JSCJ 2SD667

JSCJ · Transistors (BJTs) · MPN 2SD667

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)1.5MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain320
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 1A 1.5MHz 0.9W Through Hole TO-92L

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