JSCJ 2SB649

JSCJ · Transistors (BJTs) · MPN 2SB649

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 120V 1.5A 140MHz 1W Through Hole TO-126

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