JSCJ 2SA966

JSCJ · Transistors (BJTs) · MPN 2SA966

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO30V
DC Current Gain320
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation900mW
typePNP
Number1 PNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))2V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 1.5A 0.9W Through Hole TO-92MOD

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