JSCJ 2SA950

JSCJ · Transistors (BJTs) · MPN 2SA950

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation600mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 0.8A 120MHz 0.6W Through Hole TO-92

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