JSCJ 2SA562

JSCJ · Transistors (BJTs) · MPN 2SA562

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain70
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 500mW Through Hole TO-92

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