JSCJ 2N5401

JSCJ · Transistors (BJTs) · MPN 2N5401

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor 150V 0.6A 300MHz 625mW Through Hole TO-92

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