Jingdao Microelectronics · Transistors (BJTs) · MPN MMBT5401-L
No reviews yet — be the first to review Jingdao Microelectronics MMBT5401-L.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 150V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 80 |
| Pd - Power Dissipation | 300mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 600mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP 150V 0.6A 100MHz 0.3W Surface Mount SOT-23