Jingdao Microelectronics MMBT3906WH

Jingdao Microelectronics · Transistors (BJTs) · MPN MMBT3906WH

No reviews yet — be the first to review Jingdao Microelectronics MMBT3906WH.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Number1 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200mW Surface Mount SOT-363

Related Transistors (BJTs)