Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JS65R170FM
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| Gate Charge(Qg) | 38.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.665nF |
650V 20A 34W Through Hole TO-220MF