Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS7HN65BC-262
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 1.35Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
N-Channel 650V 7A 120W Through Hole TO-262-3