Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS650S
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| Drain to Source Voltage | 200V |
|---|---|
| Current - Continuous Drain(Id) | 28A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 158W |
| RDS(on) | 85mΩ@10V |
| Number | 1 N-channel |
200V 28A 4V 158W 85mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS