Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS640C
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| Gate Charge(Qg) | 62nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 245pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 180mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.76nF |
200V 18A 4V 140W 180mΩ@10V TO-220 Single FETs, MOSFETs RoHS